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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1567 description collector-emitter breakdown voltage- : v (br)ceo = -100v(min) high dc current gain- : h fe = 1000(min)@ (v ce = -2v, i c = -1a) complement to type 2sd2398 applications designed for high power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -8 v i c collector current-continuous -2 a i cm collector current-peak -3 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1567 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -5ma; i b = 0 b -100 v v (br)cbo collector-base breakdown voltage i c = -50 a; i e = 0 -100 v v ce (sat) collector-emitter saturation voltage i c = -1a; i b = -1ma b -1.5 v i cbo collector cutoff current v cb = -100v; i e = 0 -10 a i ebo emitter cutoff current v eb = -7v; i c = 0 -3.0 ma h fe dc current gain i c = -1a; v ce = -2v 1000 10000 c ob collector output capacitance i e = 0; v cb = -10v; f= 1mhz 35 pf isc website www.iscsemi.cn 2 |
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